DMN2065UWQ-7

Teknik Özellikler

Jesd30 Code

R-PDSO-G3

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

3.1A Ta

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

30

Terminal Pozisyonu

DUAL

Drain Currentmax Abs Id

2.8A

Yayın Yılı

2017

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

1V @ 250μA

Input Capacitance Ciss Max Vds

400pF @ 10V

Drainsource On Resistancemax

0.065Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

1

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

20V

Fet Type

N-Channel

Terminal Formu

GULL WING

Reference Standard

AEC-Q101

Fabrika Tedarik Süresi

14 Weeks

Terminal Sayısı

3

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

5.4nC @ 4.5V

Terminal Kaplaması

Matte Tin (Sn)

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Rds On Max Id Vgs

56m Ω @ 2A, 4.5V

Power Dissipation Max

700mW Ta

Additional Feature

HIGH RELIABILITY

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

SC-70, SOT-323

Vgs Max

±12V