DMN1260UFA-7B

Teknik Özellikler

Drain To Source Breakdown Voltage

12V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Kapasitans

60pF

Jesd30 Code

R-PSSO-N2

Current Continuous Drain Id25

500mA Ta

Turn On Delay Time

7.4 ns

Vgsth Max Id

1V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2015

Drain Currentmax Abs Id

0.5A

Montaj

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

18.8ns

Number Of Channels

1

Input Capacitance Ciss Max Vds

60pF @ 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

500mA

Case Connection

DRAIN

Fall Time Typ

59.2 ns

Number Of Elements

1

Element Configuration

Single

Gate To Source Voltage Vgs

8V

Pin Sayısı

3

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate Charge Qg Max Vgs

0.96nC @ 4.5V

Terminal Formu

NO LEAD

Fet Type

N-Channel

Terminal Sayısı

2

Fabrika Tedarik Süresi

15 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipation Max

360mW Ta

Rds On Max Id Vgs

366m Ω @ 200mA, 4.5V

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Montaj Tipi

Surface Mount

Parça Durumu

Active

Kılıf / Paket

3-XFDFN