DMN10H120SE-13

Teknik Özellikler

Current Continuous Drain Id25

3.6A Ta

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G4

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

100V

Montaj

Surface Mount

Vgsth Max Id

3V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2015

Pulsed Drain Currentmax Idm

16A

Input Capacitance Ciss Max Vds

549pF @ 50V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.11Ohm

Ds Breakdown Voltagemin

100V

Case Connection

DRAIN

Continuous Drain Current Id

3.6A

Transistor Element Material

SILICON

Number Of Elements

1

Terminal Sayısı

4

Fabrika Tedarik Süresi

22 Weeks

Terminal Formu

GULL WING

Fet Type

N-Channel

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

10nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Montaj Tipi

Surface Mount

Power Dissipation Max

1.3W Ta

Drive Voltage Max Rds On Min Rds On

6V 10V

Rds On Max Id Vgs

110m Ω @ 3.3A, 10V

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Vgs Max

±20V

Kılıf / Paket

TO-261-4, TO-261AA