DMN10H099SK3-13

Teknik Özellikler

Montaj

Surface Mount

Turn On Delay Time

5.4 ns

Vgsth Max Id

3V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2014

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

100V

Current Continuous Drain Id25

17A Tc

RoHS Durumu

ROHS3 Compliant

Kapasitans

1.172nF

Jesd30 Code

R-PSSO-G2

Transistor Element Material

SILICON

Continuous Drain Current Id

17A

Fall Time Typ

7.3 ns

Case Connection

DRAIN

Number Of Elements

1

Element Configuration

Single

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.08Ohm

Rise Time

5.9ns

Input Capacitance Ciss Max Vds

1172pF @ 50V

Pulsed Drain Currentmax Idm

20A

Number Of Channels

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Matte Tin (Sn)

Gate Charge Qg Max Vgs

25.2nC @ 10V

Gate To Source Voltage Vgs

20V

Terminal Sayısı

2

Fabrika Tedarik Süresi

23 Weeks

Avalanche Energy Rating Eas

28.5 mJ

Terminal Formu

GULL WING

Fet Type

N-Channel

Turn Off Delay Time

20 ns

Vgs Max

±20V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3