DMN1032UCB4-7

Teknik Özellikler

Element Configuration

Single

Transistor Element Material

SILICON

Continuous Drain Current Id

4.8A

Fall Time Typ

9 ns

Number Of Elements

1

Number Of Channels

1

Input Capacitance Ciss Max Vds

450pF @ 6V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.038Ohm

Rise Time

5.6ns

Turn On Delay Time

3.3 ns

Vgsth Max Id

1.2V @ 250μA

Yayın Yılı

2015

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

4.8A Ta

Drain To Source Breakdown Voltage

12V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

BOTTOM

JESD-609 Kodu

e1

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

4-UFBGA, WLBGA

Turn Off Delay Time

24 ns

Vgs Max

±8V

Montaj Tipi

Surface Mount

Parça Durumu

Active

Drive Voltage Max Rds On Min Rds On

1.8V 4.5V

Rds On Max Id Vgs

26m Ω @ 1A, 4.5V

Power Dissipation Max

900mW Ta

Additional Feature

HIGH RELIABILITY

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

BALL

Fet Type

N-Channel

Terminal Sayısı

4

Fabrika Tedarik Süresi

34 Weeks

Gate To Source Voltage Vgs

8V