Adet bazlı fiyat
- 1+ adet$0.47
- 10+ adet$0.45
- 100+ adet$0.42
- 500+ adet$0.40
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Montaj
- Surface Mount
- Vgsth Max Id
- 800mV @ 250μA
- Turn On Delay Time
- 7.6 ns
- Yayın Yılı
- 2017
- ECCN Kodu
- EAR99
- Terminal Pozisyonu
- DUAL
- Tepe Reflow Süresi (maks. sn)
- 40
- Transistor Application
- SWITCHING
- Genişlik
- 2.05mm
- Uzunluk
- 2.05mm
- Fall Time Typ
- 16.8 ns
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Contact Plating
- Gold
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 8V
- Fet Type
- N-Channel
- Vgs Max
- ±8V
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Ambalaj
- Tape & Reel (TR)
- Reach Svhc
- No SVHC
- Additional Feature
- HIGH RELIABILITY
- Power Dissipation Max
- 690mW Ta
- Yükseklik
- 580μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Drain To Source Voltage Vdss
- 12V
- Current Continuous Drain Id25
- 11A Ta
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Jesd30 Code
- R-PDSO-N3
- Continuous Drain Current Id
- 11A
- Case Connection
- DRAIN
- Element Configuration
- Single
- Rise Time
- 22.2ns
- Input Capacitance Ciss Max Vds
- 2425pF @ 10V
- Number Of Channels
- 1
- Tepe Reflow Sıcaklığı (°C)
- 260
- Gate Charge Qg Max Vgs
- 50.6nC @ 8V
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