Adet bazlı fiyat
- 1+ adet$1.32
- 10+ adet$1.24
- 100+ adet$1.17
- 500+ adet$1.10
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- JESD-609 Kodu
- e3
- Drain Currentmax Abs Id
- 9A
- Turn On Delay Time
- 39 ns
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Reach Svhc
- No SVHC
- Terminal Kaplaması
- Matte Tin (Sn)
- Current Continuous Drain Id25
- 9A Tc
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tube
- Drain To Source Voltage Vdss
- 650V
- Weight
- 2.299997g
- Gate To Source Voltage Vgs
- 30V
- Continuous Drain Current Id
- 9A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drive Voltage Max Rds On Min Rds On
- 10V
- Jedec95 Code
- TO-220AB
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fall Time Typ
- 28 ns
- Vgs Max
- ±30V
- Input Capacitance Ciss Max Vds
- 2310pF @ 25V
- Yayın Yılı
- 2012
- Ds Breakdown Voltagemin
- 650V
- Uzunluk
- 16.07mm
- Turn Off Delay Time
- 122 ns
- Additional Feature
- HIGH RELIABILITY
- Transistor Element Material
- SILICON
- Genişlik
- 4.9mm
- Kılıf / Paket
- TO-220-3 Full Pack, Isolated Tab
- Number Of Channels
- 1
- Power Dissipation Max
- 13W Tc
- Rise Time
- 29ns
- Element Configuration
- Single
- Vgsth Max Id
- 5V @ 250μA
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