DMG9N65CT

Teknik Özellikler

Montaj

Through Hole

Fabrika Tedarik Süresi

8 Weeks

Yayın Yılı

2015

Input Capacitance Ciss Max Vds

2310pF @ 25V

Vgs Max

±30V

Turn On Delay Time

39 ns

Drain Currentmax Abs Id

9A

JESD-609 Kodu

e3

Rise Time

29ns

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Reach Svhc

No SVHC

Number Of Channels

1

Terminal Kaplaması

Matte Tin (Sn)

Terminal Pozisyonu

SINGLE

Current Continuous Drain Id25

9A Tc

Power Dissipation Max

165W Tc

Montaj Tipi

Through Hole

Kılıf / Paket

TO-220-3

Drain To Source Breakdown Voltage

650V

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Turn Off Delay Time

122 ns

Gate To Source Voltage Vgs

30V

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Weight

2.299997g

Pin Sayısı

3

Tepe Reflow Süresi (maks. sn)

40

Vgsth Max Id

5V @ 250μA

Fall Time Typ

28 ns

Kurşunsuz Kodu

no

Gate Charge Qg Max Vgs

39nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Obsolete

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Fet Type

N-Channel