DMG1013T-7

Teknik Özellikler

Rise Time

8.1ns

Element Configuration

Single

Number Of Channels

1

Terminal Pozisyonu

DUAL

Power Dissipation Max

270mW Ta

Genişlik

850μm

Kılıf / Paket

SOT-523

Contact Plating

Tin

Uzunluk

1.7mm

Transistor Element Material

SILICON

Additional Feature

HIGH RELIABILITY

Turn Off Delay Time

28.4 ns

Yayın Yılı

2009

Input Capacitance Ciss Max Vds

59.76pF @ 16V

Vgs Max

±6V

Direnç

700mOhm

ECCN Kodu

EAR99

Max Junction Temperature Tj

150°C

Kurşunsuz Kodu

yes

Gate Charge Qg Max Vgs

0.622nC @ 4.5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Pin Sayısı

3

Fet Type

P-Channel

Kurşunsuz

Lead Free

Rds On Max Id Vgs

700m Ω @ 350mA, 4.5V

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

1V @ 250μA

Yükseklik

900μm

Transistor Application

SWITCHING

Reach Svhc

No SVHC

Current Continuous Drain Id25

460mA Ta

Montaj Tipi

Surface Mount

Drain To Source Breakdown Voltage

-20V

Terminal Formu

GULL WING

Montaj

Surface Mount

Fabrika Tedarik Süresi

14 Weeks

Turn On Delay Time

5.1 ns

Drain Currentmax Abs Id

0.46A

JESD-609 Kodu

e3