SST309

Teknik Özellikler

Transistor Application

AMPLIFIER

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G3

Güç (Watt)

0.125W, 1/8W

Kılıf / Paket

Axial

Seri

Military, MIL-PRF-55182/01, RNC55

Tedarikçi Cihaz Paketi

Axial

Number Of Terminals

3

Feedback Capmax Crss

2.5

Failure Rate

S (0.001%)

Tolerans

±0.1%

Additional Feature

LOW NOISE

Boyut / Ölçü

0.094 Dia x 0.250 L (2.39mm x 6.35mm)

Configuration

SINGLE

Terminal Formu

GULL WING

Temperature Coefficient

±25ppm/°C

Qualification Status

Not Qualified

Operating Temperaturemax

135

Özellikler

Military, Moisture Resistant, Weldable

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Çalışma Sıcaklığı

-65°C ~ 175°C

Composition

Metal Film

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

25

Number Of Elements

1

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

.36

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Sayısı

2

Operating Mode

DEPLETION MODE

Ambalaj

Bulk

Direnç

182 kOhms

Fet Technology

JUNCTION

Parça Durumu

Active

Yüzey Montaj

YES