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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Forward Transconductance Min
- 8 S
- Kılıf / Paket
- D3PAK-3
- Fall Time
- 13 ns
- Rds On Drainsource Resistance
- 2.4 Ohms
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Birim Ağırlık
- 0.218699 oz
- Montaj Stili
- SMD/SMT
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Qg Gate Charge
- 80 nC
- Number Of Channels
- 1 Channel
- Pd Power Dissipation
- 335 W
- Configuration
- Single
- Id Continuous Drain Current
- 7 A
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Fabrika Paket Adedi
- 1
- Minimum Operating Temperature
- - 55 C
- Typical Turnoff Delay Time
- 45 ns
- Rise Time
- 8 ns
- Typical Turnon Delay Time
- 14 ns
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 150 C
- Ambalaj
- Tube
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