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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ambalaj
- Tube
- Qg Gate Charge
- 423 nC
- Configuration
- Single
- Typical Turnoff Delay Time
- 64 ns
- Transistor Polarity
- N-Channel
- Fall Time
- 23 ns
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Minimum Operating Temperature
- - 55 C
- Vds Drainsource Breakdown Voltage
- 500 V
- Rise Time
- 25 ns
- Fabrika Paket Adedi
- 1
- Pd Power Dissipation
- 625 W
- Id Continuous Drain Current
- 58 A
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Channel Mode
- Enhancement
- Typical Turnon Delay Time
- 14 ns
- Rds On Drainsource Resistance
- 80 mOhms
- RoHS
- Details
- Number Of Channels
- 1 Channel
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Transistor Type
- 1 N-Channel
- Kılıf / Paket
- TO-264-3
- Birim Ağırlık
- 0.352740 oz
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