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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Forward Transconductance Min
- 4.5 S
- Rise Time
- 4.4 ns
- Pd Power Dissipation
- 225 W
- Channel Mode
- Enhancement
- Yükseklik
- 9.19 mm
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Number Of Channels
- 1 Channel
- RoHS
- Details
- Rds On Drainsource Resistance
- 3.12 Ohms
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Ambalaj
- Tube
- Configuration
- Single
- Transistor Polarity
- N-Channel
- Fall Time
- 6.9 ns
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Minimum Operating Temperature
- - 55 C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Fabrika Paket Adedi
- 1
- Typical Turnon Delay Time
- 7.4 ns
- Id Continuous Drain Current
- 5 A
- Kılıf / Paket
- TO-220-3
- Uzunluk
- 10.26 mm
- Birim Ağırlık
- 0.068784 oz
- Qg Gate Charge
- 43 nC
- Genişlik
- 4.72 mm
- Typical Turnoff Delay Time
- 24 ns
- Tradename
- Power MOS 8
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