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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Fall Time
- 38 ns
- Transistor Polarity
- N-Channel
- Vds Drainsource Breakdown Voltage
- 1 kV
- Minimum Operating Temperature
- - 55 C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Configuration
- Single
- Ambalaj
- Tube
- Number Of Channels
- 1 Channel
- RoHS
- Details
- Rds On Drainsource Resistance
- 290 mOhms
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Pd Power Dissipation
- 1.135 kW
- Channel Mode
- Enhancement
- Yükseklik
- 5.21 mm
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Forward Transconductance Min
- 39 S
- Rise Time
- 40 ns
- Tradename
- Power MOS 8
- Genişlik
- 20.5 mm
- Typical Turnoff Delay Time
- 150 ns
- Qg Gate Charge
- 305 nC
- Kılıf / Paket
- TO-264-3
- Uzunluk
- 26.49 mm
- Birim Ağırlık
- 0.352740 oz
- Typical Turnon Delay Time
- 44 ns
- Id Continuous Drain Current
- 37 A
- Fabrika Paket Adedi
- 1
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