Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Channel Mode
- Enhancement
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Fall Time
- 33 ns
- Forward Transconductance Min
- 34 S
- Montaj Stili
- Through Hole
- Pd Power Dissipation
- 1.04 kW
- RoHS
- Details
- Configuration
- Single
- Rise Time
- 35 ns
- Transistor Polarity
- N-Channel
- Birim Ağırlık
- 0.208116 oz
- Fabrika Paket Adedi
- 1
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Typical Turnon Delay Time
- 39 ns
- Number Of Channels
- 1 Channel
- Minimum Operating Temperature
- - 55 C
- Kılıf / Paket
- T-MAX-3
- Maks. Çalışma Sıcaklığı
- + 150 C
- Ambalaj
- Tube
- Vds Drainsource Breakdown Voltage
- 1 kV
- Id Continuous Drain Current
- 30 A
- Qg Gate Charge
- 260 nC
- Rds On Drainsource Resistance
- 440 mOhms
- Typical Turnoff Delay Time
- 130 ns
İlgili Ürünler
ON Semiconductor
1HN04CH-TL-W
Single MOSFETs Transistors
ON Semiconductor
1HP04CH-TL-W
Single MOSFETs Transistors
Microchip Technology
2N6660
Single MOSFETs Transistors
Microchip Technology
2N6661
Single MOSFETs Transistors
Infineon
2N6788
Single MOSFETs Transistors
ON Semiconductor
2N7000-D26Z
Single MOSFETs Transistors
Microchip Technology
2N7000-G
Single MOSFETs Transistors
ON Semiconductor
2N7000BU
Single MOSFETs Transistors