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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maks. Çalışma Sıcaklığı
- + 150 C
- Vds Drainsource Breakdown Voltage
- 1 kV
- Uzunluk
- 21.46 mm
- Id Continuous Drain Current
- 18 A
- Rds On Drainsource Resistance
- 600 mOhms
- Typical Turnon Delay Time
- 22 ns
- Minimum Operating Temperature
- - 55 C
- Rise Time
- 20 ns
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Fabrika Paket Adedi
- 1
- Forward Transconductance Min
- 19 S
- Montaj Stili
- Through Hole
- Channel Mode
- Enhancement
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- RoHS
- Details
- Configuration
- Single
- Ambalaj
- Tube
- Typical Turnoff Delay Time
- 75 ns
- Qg Gate Charge
- 150 nC
- Genişlik
- 16.26 mm
- Kılıf / Paket
- TO-247-3
- Number Of Channels
- 1 Channel
- Birim Ağırlık
- 0.211644 oz
- Transistor Polarity
- N-Channel
- Yükseklik
- 5.31 mm
- Fall Time
- 19 ns
- Pd Power Dissipation
- 625 W
- Tradename
- Power MOS 8
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