AOTF20S60L

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

aMOS™

Drain To Source Voltage Vdss

600V

Pin Sayısı

3

Kılıf / Paket

TO-220-3 Full Pack

Vgs Max

±30V

Parça Durumu

Not For New Designs

Ambalaj

Tube

Continuous Drain Current Id

20A

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

1038pF @ 100V

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2009

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

80A

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

30V

Power Dissipation Max

37.8W Tc

Gate Charge Qg Max Vgs

19.8nC @ 10V

Fet Type

N-Channel

Rds On Max Id Vgs

199m Ω @ 10A, 10V

Terminal Sayısı

3

Jedec95 Code

TO-220AB

Transistor Application

SWITCHING

Montaj

Through Hole

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

20A Tc

Vgsth Max Id

4.1V @ 250μA

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

16 Weeks