Adet bazlı fiyat
- 1+ adet$1.54
- 10+ adet$1.46
- 100+ adet$1.37
- 500+ adet$1.30
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Drain To Source Voltage Vdss
- 600V
- Seri
- aMOS™
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance Ciss Max Vds
- 1038pF @ 100V
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Continuous Drain Current Id
- 20A
- Parça Durumu
- Not For New Designs
- Vgs Max
- ±30V
- Jesd30 Code
- R-PSFM-T3
- Kılıf / Paket
- TO-220-3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 1
- Yayın Yılı
- 2010
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Pozisyonu
- SINGLE
- Power Dissipation Max
- 266W Tc
- Gate To Source Voltage Vgs
- 30V
- Ds Breakdown Voltagemin
- 600V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pulsed Drain Currentmax Idm
- 80A
- Jedec95 Code
- TO-220AB
- Terminal Sayısı
- 3
- Rds On Max Id Vgs
- 199m Ω @ 10A, 10V
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 19.8nC @ 10V
- Montaj
- Through Hole
- Transistor Application
- SWITCHING
- Vgsth Max Id
- 4.1V @ 250μA
- Current Continuous Drain Id25
- 20A Tc
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kurşunsuz
- Lead Free
- Fabrika Tedarik Süresi
- 16 Weeks
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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