AO4466

Teknik Özellikler

Gate To Source Voltage Vgs

20V

Yayın Yılı

2013

Gate Charge Qg Max Vgs

8.6nC @ 10V

Power Dissipation

3.1W

Pulsed Drain Currentmax Idm

50A

Number Of Elements

1

Fet Type

N-Channel

Vgs Max

±20V

Configuration

SINGLE WITH BUILT-IN DIODE

Rds On Max Id Vgs

23m Ω @ 10A, 10V

Terminal Sayısı

8

Drainsource On Resistancemax

0.023Ohm

Pin Sayısı

8

Ds Breakdown Voltagemin

30V

Current Continuous Drain Id25

10A Ta

Terminal Formu

GULL WING

Pin Sayısı

8

Qualification Status

Not Qualified

Montaj Tipi

Surface Mount

Parça Durumu

Not For New Designs

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

448pF @ 15V

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2.6V @ 250μA

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

10A

Power Dissipation Max

3.1W Ta

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

RoHS Durumu

ROHS3 Compliant

Drive Voltage Max Rds On Min Rds On

4.5V 10V