AO4441

Teknik Özellikler

Radyasyon Dayanımı

No

Pin Sayısı

8

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Drain Currentmax Abs Id

4A

Number Of Channels

1

Current Continuous Drain Id25

4A Ta

Terminal Formu

GULL WING

Rds On Max Id Vgs

100m Ω @ 4A, 10V

Vgs Max

±20V

Fet Type

P-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

8 ns

Yükseklik

1.75mm

Terminal Sayısı

8

Gate Charge Qg Max Vgs

20nC @ 10V

Power Dissipation

3.1W

Number Of Elements

1

Gate To Source Voltage Vgs

20V

Yayın Yılı

2005

Turn Off Delay Time

31.5 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Drain To Source Voltage Vdss

60V

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

-60V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Threshold Voltage

-2.1V

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

-4A

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

3.1W Ta

Input Capacitance Ciss Max Vds

1120pF @ 30V

Transistor Application

SWITCHING

Vgsth Max Id

3V @ 250μA

Ambalaj

Tape & Reel (TR)

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Fabrika Tedarik Süresi

18 Weeks

Transistor Element Material

SILICON