AO3414

Teknik Özellikler

Number Of Elements

1

Gate Charge Qg Max Vgs

6.2nC @ 4.5V

Power Dissipation

1.4W

Gate To Source Voltage Vgs

8V

Yayın Yılı

2006

Rds On Max Id Vgs

50m Ω @ 4.2A, 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs Max

±8V

Fet Type

N-Channel

Terminal Sayısı

3

Turn On Delay Time

2.5 ns

Yükseklik

1.25mm

Drain Currentmax Abs Id

4.2A

Number Of Channels

1

Drainsource On Resistancemax

0.05Ohm

ECCN Kodu

EAR99

Terminal Formu

GULL WING

Current Continuous Drain Id25

3A Ta

Radyasyon Dayanımı

No

Pin Sayısı

3

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Terminal Pozisyonu

DUAL

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

436pF @ 10V

Transistor Application

SWITCHING

Vgsth Max Id

1V @ 250μA

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

3A

Çalışma Sıcaklığı

-55°C~150°C TJ

Montaj

Surface Mount

Power Dissipation Max

1.4W Ta

Turn Off Delay Time

21 ns

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Threshold Voltage

700mV