YJQ2012A

Specifications

Ds Breakdown Voltagemin

20 V

Operating Temperaturemin

-55 °C

Configuration

SINGLE WITH BUILT-IN DIODE

Date Of Intro

2020-09-24

Number Of Terminals

6

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

12 A

Ihs Manufacturer

YANGZHOU YANGJIE ELECTRONICS CO LTD

Pulsed Drain Currentmax Idm

50 A

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

REACH Uyumluluk Kodu

compliant

Package Style

SMALL OUTLINE

Rohs Code

Yes

Terminal Pozisyonu

DUAL

Case Connection

DRAIN

Transistor Application

SWITCHING

Package Shape

SQUARE

Yüzey Montaj

YES

Number Of Elements

1

Jesd30 Code

S-PDSO-N6

HTS Kodu

8541.29.00.95

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Power Dissipation Ambientmax

2.5 W

Power Dissipationmax Abs

2.5 W

ECCN Kodu

EAR99

Part Life Cycle Code

Active

Feedback Capmax Crss

140 pF

Operating Temperaturemax

150 °C

Drainsource On Resistancemax

0.013 Ω

Package Description

,