YJG130G04A

Specifications

Terminal Formu

FLAT

Transistor Element Material

SILICON

Operating Temperaturemax

150 °C

Drainsource On Resistancemax

0.003 Ω

ECCN Kodu

EAR99

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, R-PDSO-F5

Case Connection

DRAIN

Transistor Application

SWITCHING

Number Of Elements

1

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-F5

Pulsed Drain Currentmax Idm

390 A

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

N-CHANNEL

Package Style

SMALL OUTLINE

REACH Uyumluluk Kodu

compliant

Terminal Pozisyonu

DUAL

Ds Breakdown Voltagemin

40 V

Avalanche Energy Rating Eas

200 mJ

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperaturemin

-55 °C

Number Of Terminals

5

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Ihs Manufacturer

YANGZHOU YANGJIE ELECTRONICS CO LTD

Drain Currentmax Id

130 A