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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Lifecycle Status
- Production (Last Updated: 3 years ago)
- RoHS
- Compliant
- Drain To Source Voltage Vdss
- 150 V
- Test Voltage
- 50 V
- Transistor Type
- HEMT
- Frekans
- 1.2 GHz
- Akım Değeri
- 42 mA
- Seri
- GaN
- Number Of Channels
- 1
- Drain To Source Breakdown Voltage
- 125 V
- Yayın Yılı
- 2016
- Min. Çalışma Sıcaklığı
- -40 °C
- Current Test
- 500mA
- Manufacturer Lifecycle Status
- PRODUCTION (Last Updated: 3 years ago)
- Maks. Çalışma Sıcaklığı
- 130 °C
- Parça Durumu
- Active
- Voltage Rating
- 50 V
- Fabrika Tedarik Süresi
- 8 Weeks
- RoHS Durumu
- RoHS Compliant
- Max Junction Temperature Tj
- 225 °C
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Kılıf / Paket
- 440162
- Ambalaj
- Tube
- Nominal Gerilim
- 125V
- Continuous Drain Current Id
- 18 A
- Voltage Test
- 50V
- Efficiency
- 77 %
- Gain
- 18 dB
- Test Current
- 500 mA
- Max Frequency
- 1.4 GHz
- Power Output
- 330W
- Output Power
- 330 W
- Max Output Power
- 250 W
- Gate To Source Voltage Vgs
- -10 V
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