CGH25120F

Specifications

Seri

GaN

Frekans

2.5 GHz

Transistor Type

HEMT

Drain To Source Voltage Vdss

120 V

Lifecycle Status

Production (Last Updated: 3 years ago)

Maks. Çalışma Sıcaklığı

150 °C

Manufacturer Lifecycle Status

PRODUCTION (Last Updated: 3 years ago)

Current Test

500mA

Power Dissipation

56 W

Min. Çalışma Sıcaklığı

-40 °C

Drain To Source Breakdown Voltage

84 V

Number Of Channels

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Max Junction Temperature Tj

225 °C

RoHS Durumu

RoHS Compliant

Voltage Rating

28 V

Parça Durumu

Not For New Designs

Continuous Drain Current Id

12 A

Voltage Test

28V

Nominal Gerilim

84V

Kılıf / Paket

440162

Max Frequency

2.7 GHz

Tedarikçi Cihaz Paketi

440162

Efficiency

30 %

Gain

7 dB

Power Output

130W

Gate To Source Voltage Vgs

-10 V

Max Output Power

120 W