SQS415ENW-T1_GE3

Specifications

Drainsource On Resistancemax

0.0161 Ω

Pulsed Drain Currentmax Idm

64 A

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

15 Weeks

Package Shape

SQUARE

Package Description

SMALL OUTLINE, S-PDSO-F5

REACH Uyumluluk Kodu

unknown

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Style

SMALL OUTLINE

Operating Temperaturemin

-55 °C

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Rohs Code

Yes

Ds Breakdown Voltagemin

40 V

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Saturation Current

1

Exterior Housing Material

1

Terminal Formu

FLAT

Number Of Terminals

5

Yüzey Montaj

YES

Part Life Cycle Code

Active

Terminal Kaplaması

Pure Matte Tin (Sn) - annealed

Drain Currentmax Id

16 A

Jesd30 Code

S-PDSO-F5

Operating Temperaturemax

175 °C

Polaritychannel Type

P-CHANNEL

Avalanche Energy Rating Eas

31.2 mJ

Reference Standard

AEC-Q101

Configuration

SINGLE WITH BUILT-IN DIODE

Package Body Material

PLASTIC/EPOXY

Case Connection

DRAIN