SI7686DP-T1-E3

Specifications

Rohs Code

Yes

Pulsed Drain Currentmax Idm

50 A

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Saturation Current

1

Package Description

ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Exterior Housing Material

1

Avalanche Energy Rating Eas

5 mJ

Part Life Cycle Code

Not Recommended

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drain Currentmax Id

17.9 A

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.0095 Ω

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

38 W

Polaritychannel Type

N-CHANNEL

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Jesd30 Code

R-XDSO-C5

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5