SI7625DN-T1-GE3

Specifications

Rohs Code

Yes

Pulsed Drain Currentmax Idm

80 A

Terminal Kaplaması

Matte Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Exterior Housing Material

1

ECCN Kodu

EAR99

Saturation Current

1

Drain Currentmax Id

17.3 A

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.007 Ω

Avalanche Energy Rating Eas

20 mJ

Part Life Cycle Code

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

52 W

Polaritychannel Type

P-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Jesd30 Code

S-XDSO-C5

Operating Mode

ENHANCEMENT MODE