SI7615ADN-T1-GE3

Specifications

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

S-PDSO-C5

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Package Shape

SQUARE

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

40

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

P-CHANNEL

Saturation Current

1

Package Description

HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

ECCN Kodu

EAR99

Exterior Housing Material

1

Fabrika Tedarik Süresi

18 Weeks

Avalanche Energy Rating Eas

20 mJ

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Yüzey Montaj

YES

Drain Currentmax Id

35 A

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0044 Ω

Pulsed Drain Currentmax Idm

80 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

20 V

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE