SI7489DP-T1-E3

Specifications

Configuration

SINGLE WITH BUILT-IN DIODE

Turnon Timemax Ton

55 ns

JESD-609 Kodu

e3

Case Connection

DRAIN

Ds Breakdown Voltagemin

100 V

Pulsed Drain Currentmax Idm

40 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn) - annealed

Turnoff Timemax Toff

315 ns

Drain Currentmax Id

28 A

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.041 Ω

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

61 mJ

Transistor Element Material

SILICON

Yüzey Montaj

YES

Qualification Status

Not Qualified

Package Description

POWERPAK SO-8

Fabrika Tedarik Süresi

10 Weeks, 4 Days

ECCN Kodu

EAR99

Exterior Housing Material

1

Saturation Current

1

Polaritychannel Type

P-CHANNEL

Power Dissipationmax Abs

83 W

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Operating Temperaturemin

-55 °C

Package Style

SMALL OUTLINE

Terminal Formu

FLAT

Operating Temperaturemax

150 °C

Package Shape

RECTANGULAR

Terminal Pozisyonu

DUAL

Number Of Terminals

8

Jesd30 Code

R-PDSO-F8

Operating Mode

ENHANCEMENT MODE

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

PLASTIC/EPOXY