SI7478DP-T1-GE3

Specifications

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Noal Current

3min

Jesd30 Code

R-XDSO-C5

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Çalışma Sıcaklığı

0…+40 °C

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Power Dissipationmax Abs

5.4 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Saturation Current

1

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Qualification Status

Not Qualified

Exterior Housing Material

1

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Number Of Contacts

2

Avalanche Energy Rating Eas

61 mJ

Part Life Cycle Code

Active

Yüzey Montaj

YES

Transistor Element Material

SILICON

Drain Currentmax Id

15 A

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.0075 Ω

Rohs Code

Yes

Pulsed Drain Currentmax Idm

60 A

Terminal Kaplaması

Matte Tin (Sn) - annealed

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

60 V

Case Connection

DRAIN

Gross Weight

0.80

Transport Package Sizequantity

40*40*35/500

Configuration

SINGLE WITH BUILT-IN DIODE