SI7439DP-T1-GE3

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

HTS Kodu

8541.29.00.95

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

5.4 W

Polaritychannel Type

P-CHANNEL

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XDSO-C5

Additional Feature

ULTRA LOW-ON RESISTANCE

Number Of Terminals

5

Terminal Pozisyonu

DUAL

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Ds Breakdown Voltagemin

150 V

Case Connection

DRAIN

JESD-609 Kodu

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn) - annealed

Rohs Code

Yes

Pulsed Drain Currentmax Idm

50 A

Transistor Element Material

SILICON

Yüzey Montaj

YES

Avalanche Energy Rating Eas

80 mJ

Part Life Cycle Code

Active

Drainsource On Resistancemax

0.09 Ω

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

3 A

Saturation Current

1

ECCN Kodu

EAR99

Exterior Housing Material

1

Package Description

SOP-8

Qualification Status

Not Qualified