SI7434DP-T1-GE3

Specifications

Ds Breakdown Voltagemin

250 V

Rated Voltage

125V

Gross Weight

2.08 g

Case Connection

DRAIN

JESD-609 Kodu

e3

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Yüzey Montaj

YES

Transistor Element Material

SILICON

Part Life Cycle Code

End Of Life

Spatial Orientation

straight

Drainsource On Resistancemax

0.155 Ω

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Connector Pinout Layout

1x29

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Operating Mode

ENHANCEMENT MODE

Package Body Material

UNSPECIFIED

Akım Değeri

3A

Connector

socket

Pulsed Drain Currentmax Idm

40 A

Rohs Code

Yes

Pin Sayısı

29

Contacts Pitch

2.54mm

Type Of Connector

pin strips

Flammability Rating

UL94V-0

Avalanche Energy Rating Eas

8.4 mJ

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

2.3 A

Kind Of Connector

female

Saturation Current

1

Exterior Housing Material

1

Contact Plating

tinned

Package Description

ROHS COMPLIANT, POWERPAK, SOP-8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Plating Thickness

4µm

Tepe Reflow Sıcaklığı (°C)

260