SI7430DP-T1-E3

Specifications

Renk

metallic/black

Package Body Material

UNSPECIFIED

Operating Mode

ENHANCEMENT MODE

Rated Current

15 / 10 A

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Polaritychannel Type

N-CHANNEL

Genişlik

Ф26 mm

ECCN Kodu

EAR99

Depth

60 mm

Maximum Load Power

120 W

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.047 Ω

Yüzey Montaj

YES

Transistor Element Material

SILICON

Mounting Method

in panel

Size Of Mounting Hole

26 mm

Part Life Cycle Code

Active

Housing Material

Alloy / heat-resistant plastic

Tip

Socket (plug) with cover

Terminal Kaplaması

Matte Tin (Sn) - annealed

Maximum Current

15/ 10 (12 V/ 24 V) A

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

150 V

Gross Weight

29.30

Case Connection

DRAIN

JESD-609 Kodu

e3

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Number Of Terminals

5

Terminal Pozisyonu

DUAL

Jesd30 Code

R-XDSO-C5

Transistor Application

SWITCHING

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

64 W

Nominal Voltage

12 / 24 V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Exterior Housing Material

1