SI7370DP-T1-GE3

Specifications

Operating Mode

ENHANCEMENT MODE

Akım Değeri

3A

Package Body Material

UNSPECIFIED

Connector Pinout Layout

1x16

Polaritychannel Type

N-CHANNEL

Operating Temperaturemax

150 °C

Package Shape

RECTANGULAR

Drainsource On Resistancemax

0.011 Ω

Part Life Cycle Code

Active

Spatial Orientation

straight

Yüzey Montaj

YES

Transistor Element Material

SILICON

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Gross Weight

4.08 g

Case Connection

DRAIN

Rated Voltage

150V

Ds Breakdown Voltagemin

60 V

Terminal Kaplaması

Matte Tin (Sn)

Electrical Mounting

SMT

Terminal Pozisyonu

DUAL

Profile

beryllium copper

Number Of Terminals

5

Jesd30 Code

R-XDSO-C5

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Power Dissipationmax Abs

5.2 W

Plating Thickness

0.75µm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Application

SWITCHING

Package Style

SMALL OUTLINE

Çalışma Sıcaklığı

-40...163°C

Terminal Formu

C BEND

Drain Currentmax Id

9.6 A

REACH Uyumluluk Kodu

compliant

Avalanche Energy Rating Eas

125 mJ

Flammability Rating

UL94V-0

Package Description

HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Contact Plating

gold-plated