SI7370DP-T1-E3

Specifications

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

5.2 W

Polaritychannel Type

N-CHANNEL

Case

MiniSKiiP® 3

Type Of Module

IGBT

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

20

Collector Current

75A

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Gateemitter Voltage

±20V

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Number Of Terminals

5

Additional Feature

FAST SWITCHING

Topology

IGBT three-phase bridge OE output,

Terminal Pozisyonu

DUAL

Electrical Mounting

Press-Fit

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XDSO-C5

Pulsed Collector Current

225A

Max Offstate Voltage

1.2kV

Semiconductor Structure

transistor/transistor

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

60 V

2nd Connector Number Of Positions Loaded

for UPS,

Mechanical Mounting

screw

Case Connection

DRAIN

Gross Weight

82 g

JESD-609 Kodu

e3

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Pulsed Drain Currentmax Idm

50 A

Drainsource On Resistancemax

0.011 Ω

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

9.6 A

Transistor Element Material

SILICON