SI7252DP-T1-GE3

Specifications

Ds Breakdown Voltagemin

100 V

Gross Weight

25.25

Case Connection

DRAIN

JESD-609 Kodu

e3

Mounting Diameter

19 mm

Backlight Color

blue

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

MATTE TIN

Contacts

2S+2S (screw)

Backlight Voltage

12 V

Housing Material

nickel-plated brass

Transistor Element Material

SILICON

Yüzey Montaj

YES

Part Life Cycle Code

Not Recommended

Drainsource On Resistancemax

0.017 Ω

Relative Humidity

45...85 %

Çap

22 mm

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Rated Current

2 A

Operating Mode

ENHANCEMENT MODE

Dielectric Strength

2000 (50 Hz / 1 min) V

Package Body Material

PLASTIC/EPOXY

Indicator Type

ring

Rohs Code

Yes

Pulsed Drain Currentmax Idm

80 A

Insulation Resistance

1000 MΩ minimum

Transport Packaging Sizequantity

42*27*34/200

Switch Type

GQ19 series vandal-proof button with backlight

Avalanche Energy Rating Eas

20 mJ

REACH Uyumluluk Kodu

not_compliant

Drain Currentmax Id

36.7 A

Saturation Current

1

Exterior Housing Material

2

Fabrika Tedarik Süresi

28 Weeks

Package Description

SOP-8

Contact Resistance

50 mΩ maximum

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30