SI7232DN-T1-GE3

Specifications

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Pulsed Drain Currentmax Idm

40 A

Ds Breakdown Voltagemin

20 V

Case Connection

DRAIN

JESD-609 Kodu

e3

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Saturation Current

1

Exterior Housing Material

2

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

6 Weeks

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Yüzey Montaj

YES

Transistor Element Material

SILICON

Avalanche Energy Rating Eas

11 mJ

Part Life Cycle Code

Active

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.0164 Ω

Drain Currentmax Id

10 A

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Power Dissipationmax Abs

23 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-XDSO-C6

Number Of Terminals

6

Terminal Pozisyonu

DUAL