SI7223DN-T1-GE3

Specifications

Transistor Element Material

SILICON

Yüzey Montaj

YES

Avalanche Energy Rating Eas

9.8 mJ

Part Life Cycle Code

Active

Drainsource On Resistancemax

0.0264 Ω

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

6 A

Turnoff Timemax Toff

110 ns

Saturation Current

1

Exterior Housing Material

2

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

8 Weeks

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

JESD-609 Kodu

e3

Turnon Timemax Ton

96 ns

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Pulsed Drain Currentmax Idm

40 A

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-PDSO-F8

Number Of Terminals

8

Terminal Pozisyonu

DUAL

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Feedback Capmax Crss

152 pF

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

23 W

Polaritychannel Type

P-CHANNEL

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Terminal Formu

FLAT

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Operating Temperaturemin

-55 °C