SI7216DN-T1-E3

Specifications

Polaritychannel Type

N-CHANNEL

Power Dissipationmax Abs

20.8 W

Tepe Reflow Sıcaklığı (°C)

260

Type Of Cable Accessories

cable chain

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

External Width

80mm

Transistor Application

SWITCHING

Version

frames openable from inner radius,

Manufacturer Series

MEDIUM

Package Style

SMALL OUTLINE

Terminal Formu

C BEND

Operating Temperaturemax

150 °C

Package Shape

SQUARE

Terminal Pozisyonu

DUAL

External Height

49mm

Number Of Terminals

6

Jesd30 Code

S-XDSO-C6

Operating Mode

ENHANCEMENT MODE

Internal Height

35mm

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Gross Weight

1200 g

Case Connection

DRAIN

Ds Breakdown Voltagemin

40 V

Pulsed Drain Currentmax Idm

20 A

Rohs Code

Yes

Uzunluk

1m

Terminal Kaplaması

Matte Tin (Sn) - annealed

Drain Currentmax Id

6.5 A

Bending Radius

125mm

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.032 Ω

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

5 mJ

Yüzey Montaj

YES

Transistor Element Material

SILICON

Qualification Status

Not Qualified