SI7164DP-T1-GE3

Specifications

Ds Breakdown Voltagemin

60 V

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

PURE MATTE TIN

Pulsed Drain Currentmax Idm

80 A

Rohs Code

Yes

Transistor Element Material

SILICON

Yüzey Montaj

YES

Avalanche Energy Rating Eas

125 mJ

Part Life Cycle Code

Not Recommended

Drainsource On Resistancemax

0.00625 Ω

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

23.5 A

Saturation Current

1

ECCN Kodu

EAR99

Exterior Housing Material

1

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

104 W

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

R-XDSO-C5

Number Of Terminals

5

Terminal Pozisyonu

DUAL

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED