SI7135DP-T1-GE3

Specifications

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

Operating Temperaturemax

150 °C

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Power Dissipationmax Abs

104 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

P-CHANNEL

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Jesd30 Code

R-XDSO-C5

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Pulsed Drain Currentmax Idm

100 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30 V

Gross Weight

42.98

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Saturation Current

1

Package Description

HALOFEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Qualification Status

Not Qualified

Exterior Housing Material

1

ECCN Kodu

EAR99

Avalanche Energy Rating Eas

80 mJ

Part Life Cycle Code

Active

Transport Packaging Sizequantity

47*35*23/520

Yüzey Montaj

YES

Transistor Element Material

SILICON

Drain Currentmax Id

31.6 A

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0039 Ω