SI7121ADN-T1-GE3

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Tolerans

±1%

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

P-CHANNEL

Type Of Capacitor

ceramic

Terminal Formu

FLAT

Çalışma Sıcaklığı

-55...125°C

Package Style

SMALL OUTLINE

Package Shape

SQUARE

Mounting

SMD

Transistor Application

SWITCHING

Jesd30 Code

S-PDSO-F5

Case Mm

3216

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Operating Voltage

50V

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Kapasitans

1.5nF

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

30 V

Kind Of Capacitor

MLCC

Case Connection

DRAIN

Gross Weight

0.039 g

Configuration

SINGLE WITH BUILT-IN DIODE

Capacitors Series

KGM

Rohs Code

Yes

Pulsed Drain Currentmax Idm

50 A

Terminal Kaplaması

Matte Tin (Sn)

Avalanche Energy Rating Eas

9.8 mJ

Part Life Cycle Code

Active

Transistor Element Material

SILICON

Case Inch

1206

Yüzey Montaj

YES

Drain Currentmax Id

18 A

Drainsource On Resistancemax

0.015 Ω

REACH Uyumluluk Kodu

compliant

Saturation Current

1