SI7117DN-T1-GE3

Specifications

ECCN Kodu

EAR99

Exterior Housing Material

1

Package Description

HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Saturation Current

1

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

1.3 Ω

Drain Currentmax Id

1.1 A

Transistor Element Material

SILICON

Yüzey Montaj

YES

Avalanche Energy Rating Eas

1.01 mJ

Part Life Cycle Code

Active

Terminal Kaplaması

Matte Tin (Sn)

Rohs Code

Yes

Pulsed Drain Currentmax Idm

2.2 A

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

150 V

Case Connection

DRAIN

JESD-609 Kodu

e3

Package Body Material

UNSPECIFIED

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Number Of Terminals

5

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-XDSO-C5

Transistor Application

SWITCHING

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Terminal Formu

C BEND

Package Style

SMALL OUTLINE

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

12.5 W

Polaritychannel Type

P-CHANNEL

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30