SI7116DN-T1-E3

Specifications

Terminal Kaplaması

Matte Tin (Sn)

Pulsed Drain Currentmax Idm

60 A

Rohs Code

Yes

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Ds Breakdown Voltagemin

40 V

JESD-609 Kodu

e3

Exterior Housing Material

1

ECCN Kodu

EAR99

Qualification Status

Not Qualified

Package Description

ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Saturation Current

1

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0078 Ω

Drain Currentmax Id

10.5 A

Transistor Element Material

SILICON

Yüzey Montaj

YES

Part Life Cycle Code

Not Recommended

Avalanche Energy Rating Eas

11 mJ

Transistor Application

SWITCHING

Operating Temperaturemax

150 °C

Package Shape

SQUARE

Package Style

SMALL OUTLINE

Terminal Formu

C BEND

Polaritychannel Type

N-CHANNEL

Power Dissipationmax Abs

3.8 W

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

40

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED

Number Of Terminals

5

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Jesd30 Code

S-XDSO-C5