SI7113DN-T1-E3

Specifications

Kind Of Interface

parallel

Operating Voltage

2.7...3.6V

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

PLASTIC/EPOXY

Terminal Pozisyonu

DUAL

Memory

8Gb FLASH

Number Of Terminals

5

Jesd30 Code

S-PDSO-F5

Operating Mode

ENHANCEMENT MODE

Operating Temperaturemin

-50 °C

Transistor Application

SWITCHING

Mounting

SMD

Çalışma Sıcaklığı

-40...85°C

Package Style

SMALL OUTLINE

Terminal Formu

FLAT

Kind Of Memory

NAND Flash

Operating Temperaturemax

150 °C

Package Shape

SQUARE

Polaritychannel Type

P-CHANNEL

Tepe Reflow Sıcaklığı (°C)

260

Power Dissipationmax Abs

52 W

HTS Kodu

8541.29.00.95

Tepe Reflow Süresi (maks. sn)

30

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Case

FBGA63

Qualification Status

Not Qualified

Package Description

ROHS COMPLIANT, POWERPAK 1212-8

Exterior Housing Material

1

ECCN Kodu

EAR99

Saturation Current

1

Drain Currentmax Id

13.2 A

Turnoff Timemax Toff

80 ns

Drainsource On Resistancemax

0.134 Ω

REACH Uyumluluk Kodu

compliant

Part Life Cycle Code

Active

Avalanche Energy Rating Eas

11.25 mJ

Transistor Element Material

SILICON

Yüzey Montaj

YES

Rohs Code

Yes

Pulsed Drain Currentmax Idm

20 A