SI7112DN-T1-GE3

Specifications

Operating Voltage

4V

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Body Material

UNSPECIFIED

Kapasitans

1µF

Jesd30 Code

S-XDSO-C5

Case Mm

1005

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Number Of Terminals

5

Terminal Formu

C BEND

Çalışma Sıcaklığı

-55...125°C

Package Style

SMALL OUTLINE

Package Shape

SQUARE

Operating Temperaturemax

150 °C

Mounting

SMD

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

30

Tolerans

±20%

Power Dissipationmax Abs

3.8 W

Tepe Reflow Sıcaklığı (°C)

260

Polaritychannel Type

N-CHANNEL

Type Of Capacitor

ceramic

Saturation Current

1

Dielektrik

X7T

Package Description

HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Exterior Housing Material

1

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Avalanche Energy Rating Eas

20 mJ

Part Life Cycle Code

Not Recommended

Transistor Element Material

SILICON

Yüzey Montaj

YES

Case Inch

0402

Drain Currentmax Id

11.3 A

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.0075 Ω

Pulsed Drain Currentmax Idm

60 A

Rohs Code

Yes