SI7106DN-T1-E3

Specifications

Power Dissipationmax Abs

3.8 W

REACH Uyumluluk Kodu

not_compliant

Transistor Application

SWITCHING

Application Area

electrical, lighting, photoelectric, security, automotive and other equipment

Installation Hole Size

Φ16.2 mm

Polaritychannel Type

N-CHANNEL

Package Shape

SQUARE

Package Style

SMALL OUTLINE

Terminal Pozisyonu

DUAL

Exterior Housing Material

1

Jesd30 Code

S-XDSO-C5

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Direnç

hydrostatic pressure - not less than 100 mbar for 30 min

Saturation Current

1

Operating Temperature Range

-40…+125 °C

Part Life Cycle Code

Active

Gross Weight

23.30

Air Permeability

not less than 1 l/min at 70 mbar pressure

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

60 A

Rohs Code

Yes

Terminal Kaplaması

Matte Tin (Sn)

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Number Of Terminals

5

Case Connection

DRAIN

Ds Breakdown Voltagemin

20 V

Tip

Pressure equalization valve M16X1.5, metal

Drain Currentmax Id

12.5 A

Package Body Material

UNSPECIFIED

Protection Class

IP67

Package Description

ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Qualification Status

Not Qualified

Drainsource On Resistancemax

0.0062 Ω

Avalanche Energy Rating Eas

45 mJ

Terminal Formu

C BEND

Fet Technology

METAL-OXIDE SEMICONDUCTOR