SI7101DN-T1-GE3

Specifications

Transistor Element Material

SILICON

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Insulation Resistance

≥500 (at Uisp.dc=500 V) MΩ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rated Current

1.5 A

Terminal Formu

C BEND

Dielectric Strength

1000 (50 Hz, 1 min.) V

Özellikler

indication

Avalanche Energy Rating Eas

20 mJ

Drainsource On Resistancemax

0.0072 Ω

Drain Currentmax Id

35 A

Package Body Material

PLASTIC/EPOXY

Ds Breakdown Voltagemin

30 V

Case Connection

DRAIN

Terminal Kaplaması

Pure Matte Tin (Sn) - annealed

ECCN Kodu

EAR99

Number Of Terminals

5

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

80 A

Rohs Code

Yes

Contact Resistance

≤30 mΩ

Connector Type

8-port shielded socket block TJ9-10P8-08 FTP (1 x 8)

Yükseklik

13.1

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Gross Weight

12.50

Depth

15.75

Operating Temperature Range

0...+70°C

Part Life Cycle Code

Active

Contacts

phosphor bronze

Saturation Current

1

Tepe Reflow Süresi (maks. sn)

30

Tepe Reflow Sıcaklığı (°C)

260

Exterior Housing Material

1

Jesd30 Code

S-PDSO-C5

Design Features

16 LED indicators

Compatibility

10P8C plug

Terminal Pozisyonu

DUAL

Transport Packaging Sizequantity

47*37*27/100

Switching Cycles Electrical

≥750