SI6562CDQ-T1-GE3

Specifications

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Yüzey Montaj

YES

Operating Mode

ENHANCEMENT MODE

Rohs Code

Yes

Part Life Cycle Code

Active

Package Body Material

PLASTIC/EPOXY

Drain Currentmax Id

4.2 A

Package Description

HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8

Terminal Kaplaması

MATTE TIN

Operating Temperaturemax

150 °C

Number Of Terminals

8

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

20 V

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.022 Ω

Qualification Status

Not Qualified

Transistor Element Material

SILICON

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

JESD-609 Kodu

e3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Power Dissipationmax Abs

1.7 W

REACH Uyumluluk Kodu

compliant

Transistor Application

SWITCHING

Package Style

SMALL OUTLINE

Package Shape

RECTANGULAR

Exterior Housing Material

2

Jesd30 Code

R-PDSO-G8

Terminal Pozisyonu

DUAL

Saturation Current

1